Schottky diode structure with multi-portioned guard ring and...

Details Schottky diode structure with multi-portioned guard ring and... Schottky diode structure with multi-portioned guard ring and...

2011-01-25

2011-01-25

Gurley, Lynne A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

In integrated structure

C257S471000, C257S475000, C257SE27068, C257SE27016

Reexamination Certificate

active

07875950

ABSTRACT:
In one embodiment, a semiconductor structure comprises a multi-portioned guard ring that includes a first portion and a second portion formed in a region of semiconductor material. A conductive contact layer forms a first Schottky barrier with the region of semiconductor material. The conductive contact layer overlaps the second portion and forms a second Schottky barrier that has an opposite polarity to the first Schottky barrier. The conductive contact layer does not overlap the first portion, which forms a pn junction with the region of semiconductor material.

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Zettler et al. p-n Junction-Schottky Barrier Hybrid Diode. IEEE Transactions on Electrode Devices, vol. ED-16, No. 1, 1969, pp. 58-63.

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