Patent
1991-12-06
1992-09-22
Mintel, William
357 90, 357 43, 357 67, H01L 2948
Patent
active
051501775
ABSTRACT:
An improved Schottky diode structure (4) is formed by retrograde diffusing an N.sup.+ concentration of relatively fast diffusing atoms, preferably Phosphorus atoms, to form a localized diode NWell (6) as the diode substrate for the diode. A buried diode layer (5) formed of relatively slow diffusing N type atoms, preferably Antimony atoms, underlies the diode NWell and electrically couples the diode junction (7) to the diode ohmic contact (9). A diode ohmic contact region (31) underlies the ohmic contact, further coupling the diode junction to the ohmic contact. Preferably, the diode junction is a Platinum-Silicide junction. The improved Schottky diode structure may be formed as part of a BICMOS integrated circuit fabrication process wherein the buried diode layer may be formed at the same time as a buried collector layer of a bipolar transistor structure, the diode NWell may be formed at the same time as an NWell of a CMOS transistor structure and the diode ohmic contact region may be formed at the same time as a collector sink region. In the BICMOS fabrication process the buried collector layer definition mask is also a buried diode layer definition mask, the retro NWell definition mask is also a diode NWell definition mask, the collector sink definition mask is also a diode ohmic contact region definition mask, and the BICMOS contacts definition mask is also a diode junction and ohmic contact definition mask.
REFERENCES:
patent: 4604790 (1986-08-01), Bonn
patent: 4752813 (1988-06-01), Bhatia et al.
patent: 4799098 (1989-01-01), Ikeda et al.
patent: 4807010 (1989-02-01), Winnerl et al.
patent: 4943742 (1990-07-01), Fukushima
Joyce Christopher C.
Luk Tim W.
Robinson Murray J.
Caseiro Chris A.
Kane, Jr. Daniel H.
Mintel William
National Semiconductor Corporation
Rose James W.
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