Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1997-02-20
2000-08-15
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257155, 257156, 257478, H01L 310312, H01L 2974, H01L 27095
Patent
active
061040436
ABSTRACT:
A Schottky diode of SiC has a substrate layer, a drift layer and emitter layer regions formed in the drift layer. A metal layer makes an ohmic contact to the emitter layer regions and Schottky contact to the drift layer. A depletion of the drift layer region between two adjacent emitter layer regions is allowed in the blocking state of the diode making the two adjacent p-type emitter layer regions form a continuous depleted region therebetween in this state.
REFERENCES:
Baliga, Analysis of Junction-Barrier-Controlled Schottky (JBS) Rectifier Characteristics, Solid State Electronics, vol. 278, No. 11, pp. 1089-1093, 1985.
Chang et al., High-Current, Low-Forward-Drop JBS Power Rectifiers, Solid State Electronics, vol. 29, No. 3, pp. 359-363, 1986.
Hower et al., The SPIN Rectifier, A New Fast-Recovery Device, PESC '88 Record, Apr. 1988, pp. 709-717.
Mehrotra et al., Low Forward Drop JBS Rectifiers Fabricated Using Submicron Technology, IEEE Transactions On Electron Devices, vol. 41, No. 9, Sep. 1994, pp. 1655-1660.
Kim et al., Low-Loss Schottky Rectifier Utilizing Trench Sidewall as Junction-Barrier-Controlled Schottky Contact, Jpn. J. Appl. Phys., vol. 34 (1995), pp. 913-916, Part 1, No. 2B, Feb. 1995.
Baliga, Trends In Power Semiconductor Devices, IEEE Transactions ON Electron Devices, vol. 43, No. 10, Oct. 1996, pp. 1717-1731.
Bakowski Mietek
Bijlenga Bo
Dahlquist Fanny
Harris Christopher Ian
Hermansson Willy
ABB Research Ltd.
Nadav Ori
Thomas Tom
LandOfFree
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