Schottky diode manufacturing process employing the synthesis of

Details Schottky diode manufacturing process employing the synthesis of Schottky diode manufacturing process employing the synthesis of

1990-09-18

1992-02-04

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437175, 437179, 437904, 4272481, 427249, 4272552, 148DIG140, H01L 2120

Patent

active

050860143

ABSTRACT:
A schottky diode manufacturing process employing diamond film comprises forming a B-doped p-type polycrystalline diamond film on a low-resistance p-type Si substrate by CVD using a source gas consisting of CH.sub.4, H.sub.2 and B.sub.2 H.sub.6, forming an ohmic contact on the back of the p-type Si substrate, and forming a metal electrode of Al, Pt Au, Ti or W on the B-doped p-type polycrystalline diamond film. The B/C concentration ratio of the source gas is greater than 0.01 ppm and less than 20 ppm.

REFERENCES:
patent: 4925701 (1990-05-01), Jansen et al.
Fujimori et al., "Characterization of Conducting Diamond Films", Vacuum, vol. 36, Nos. 1-3, 1986, pp. 99-102.
Geis et al., "High-Temperature Point-Contact Transistors and Schottky Diodes Formed on Synthetic Boron-Doped Diamond", IEEE Electron Device Letters, vol. EDL-8, No. 8, Aug. 1987, pp. 341-343.
Bazhenov et al., "Synthetic Diamons in Electronics (review)", Sov. Phys. Semicond., vol. 19, No. 8, Aug. 1985, pp. 829-841.
Glover, "The C-V Characteristics of Schottky Barriers on Laboratory Grown Semiconducting Diamonds", Solid State Electronics, 1973, vol. 16, pp. 973-983.
Moazed et al., "Ohmic Contacts to Semiconducting Diamond", Appl. Phys. Lett., vol. 41, No. 10, p. 950, 1982.
Sze, Physics of Semiconductor Devices, Bell Labs, Inc., 1981, pp. 305-307.

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