Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1986-09-23
1989-01-17
Heyman, John S.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307443, 307448, 307446, H03K 19017, H03K 19094, H03K 1920, H03K 1704
Patent
active
047989793
ABSTRACT:
A digital logic circuit using Schottky diodes as the nonlinear logic element, a single power supply and an E-mode MESFET as an inverter in the open drain configuration. Temperature compensation of the threshold voltage of the E-mode FET is provided. The circuit is particularly suited for use with a GaAs substrate.
REFERENCES:
patent: 4071774 (1978-01-01), Tokumaru et al.
patent: 4300064 (1981-11-01), Eden
patent: 4400636 (1983-08-01), Andrade
patent: 4404480 (1983-09-01), Ransom et al.
patent: 4405870 (1983-09-01), Eden
patent: 4418292 (1983-11-01), Cserhalmi et al.
patent: 4494016 (1985-01-01), Ransom et al.
patent: 4631426 (1986-12-01), Nelson et al.
patent: 4680484 (1987-07-01), Saunders
patent: 4713559 (1987-12-01), Vu et al.
Lee Gary M.
Peczalski Andrzej
Bertelson David R.
Heyman John S.
Honeywell Inc.
Shudy Jr. John G.
Udseth William T.
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