Schottky diode having overcurrent protection and low reverse...

Details Schottky diode having overcurrent protection and low reverse... Schottky diode having overcurrent protection and low reverse...

2005-03-01

2005-03-01

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

C257S472000

Reexamination Certificate

active

06861723

ABSTRACT:
The invention relates to a Schottky diode in which p-doped regions (4, 5) are incorporated in the Schottky contact area. At least one (5) of these regions (4, 5) has a greater minimum extent, in order to initiate a starting current.

REFERENCES:
patent: 20020125482 (2002-09-01), Friedrichs et al.
patent: WO 0074130 (2000-12-01), None
patent: WO 0122498 (2001-03-01), None

Affiliated with

Also associated with

Rating

Schottky diode having overcurrent protection and low reverse... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Schottky diode having overcurrent protection and low reverse..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Schottky diode having overcurrent protection and low reverse... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3400615