Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – With means to prevent edge breakdown
Reexamination Certificate
2005-02-15
2005-02-15
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
With means to prevent edge breakdown
C257S471000, C257S476000, C257S481000, C257S480000, C257S486000
Reexamination Certificate
active
06855999
ABSTRACT:
A method for fabricating a Schottky diode using a shallow trench contact to reduce leakage current in the fabrication of an integrated circuit device is described. An insulating layer is deposited over a thermal oxide layer provided overlying a silicon semiconductor substrate. A contact opening is etched through the insulating layer and the thermal oxide layer to the silicon substrate. The contact opening is overetched whereby a shallow trench is formed within the silicon substrate underlying the contact opening wherein the shallow trench has a bottom and sidewalls comprising the silicon substrate. A first metal layer is deposited over the insulating layer and within the contact opening and within the shallow trench. The first metal layer is sintered whereby the first metal layer is transformed to a silicide layer where the silicide layer contacts the silicon substrate at the bottom and sidewalls of the shallow trench and wherein the first metal layer contacting the insulating layer and thermal oxide layer is not transformed. The untransformed first metal layer is removed. A barrier metal layer is deposited overlying the insulating layer and the silicide layer within the shallow trench. A second metal layer is deposited overlying the barrier metal layer to complete fabrication of a Schottky diode in an integrated circuit device.
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Chiu Chih-Kang
Hwang Jei-Fung
Liou Ruey-Hsing
Duane Morris LLP
Duong Khanh
Taiwan Semiconductor Manufacturing Co.
Zarabian Amir
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