Semiconductor device manufacturing: process – Forming schottky junction – Compound semiconductor
Reexamination Certificate
2006-07-31
2009-06-30
Dickey, Thomas L (Department: 2826)
Semiconductor device manufacturing: process
Forming schottky junction
Compound semiconductor
C438S574000
Reexamination Certificate
active
07553747
ABSTRACT:
A Schottky diode includes a first nitride semiconductor layer formed on a substrate and a second nitride semiconductor layer selectively formed on the first nitride semiconductor layer and having a different conductivity type from that of the first nitride semiconductor layer. A Schottky electrode is selectively formed on the first nitride semiconductor layer to come into contact with the top surface of the second nitride semiconductor layer, and an ohmic electrode is formed thereon so as to be spaced apart from the Schottky electrode.
REFERENCES:
patent: 7002187 (2006-02-01), Husher
patent: 2006/0108606 (2006-05-01), Saxler et al.
patent: 60-10653 (1985-01-01), None
patent: 63311762 (1988-12-01), None
patent: 5-167064 (1993-07-01), None
Guo et al. “Study of Schottky barriers on n-type GaN grown by low-pressure metalorganic chemical vapor deposition,” Appl. Phys. Lett. 67, 2657 (1995).
Akira Itoh, “Excellent Reverse Blocking Characteristics of High0Voltage 4H-SiC Schottky Rectifiers with Boron-Implanted Edge Termination,” IEEE Electron Device Letters, 1996, pp. 139-141, vol. 17, No. 3.
Hirose Yutaka
Tanaka Tsuyoshi
Dickey Thomas L
McDermott Will & Emery LLP
Panasonic Corporation
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