Schottky diode guard ring structures

Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – With means to prevent edge breakdown

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Details

257483, 257495, H01L 27095, H01L 2947, H01L 29812, H01L 3107, H01L 31108

Patent

active

060668849

ABSTRACT:
The specification describes Schottky barrier devices with distributed guard rings. In one embodiment the guard ring only partially overlaps the barrier. In another embodiment the guard ring is spaced from the barrier throughout, but separated by an MOS gate so that the guard ring and barrier are connected at low bias by an inversion layer.

REFERENCES:
patent: 3694719 (1972-09-01), Saxena
patent: 4607270 (1986-08-01), Iesaka
patent: 4618871 (1986-10-01), Mitlehner
patent: 4862229 (1989-08-01), Mundy et al.
patent: 5804849 (1998-09-01), Wennekers
patent: 5859465 (1999-01-01), Spring et al.

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