Schottky diode formed on MOSFET drain

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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357 231, 357 233, 357 41, 357 45, 307446, 307465, 307469, 34082596, 365104, H01L 2704, G11C 1140

Patent

active

048019836

ABSTRACT:
A unidirectional switching circuit having no charge storage effect for performing a high-speed switching operation is disclosed in which one of the anode and cathode terminals of a Schottky-barrier diode is connected to one of the source and drain terminals of a field effect transistor to form the series combination of the Schottky-barrier diode and the field effect transistor, that one of end terminals of the series combination which exists on the anode side of the diode, is used as an input terminal, the other end terminal existing on the cathode side is used as an output terminal, the gate electrode of the field effect transistor is used as a switching control electrode, and a current flowing through the switching circuit in a direction from the input terminal to the output terminal is controlled in accordance with a signal applied to the switching control electrode.

REFERENCES:
patent: 3686644 (1972-08-01), Christensen
patent: 3770606 (1973-11-01), Lepselter
patent: 3788904 (1974-06-01), Haraszti
patent: 4432073 (1984-02-01), Mgsuoka

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