Schottky diode for integrated circuits

Details Schottky diode for integrated circuits Schottky diode for integrated circuits

1989-03-06

1990-10-23

James, Andrew J.

357 13, 357 59, H01L 2948

Patent

active

049656430

ABSTRACT:
An improved Schottky diode may be placed above an insulating layer such as the field oxide instead of within an epitaxial layer. The forward voltage, dynamic resistance and breakdown voltage may all be tailored.

REFERENCES:
patent: 4502894 (1985-03-01), Seto et al.
patent: 4584594 (1986-04-01), Vora et al.
patent: 4628339 (1986-12-01), Vora et al.

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