Schottky diode FET logic integrated circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307450, 307458, H03K 19094, H03K 19017, H03K 1920

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active

043000649

ABSTRACT:
A logic circuit is provided which uses Schottky barrier switching diodes to perform the "OR" logic function on logic inputs. The outputs from the switching diodes control the gate of a field-effect transistor (FET) which provides logic inversion and gain. The source of the FET is grounded and its drain provides the output of the logic circuit. Bias current for the switching diodes and gate turn-off current for the FET are provided by a pull down, and a pull up is provided to operate the FET. In a second embodiment, two separate groups of switching diodes control separate gates of a dual-gated FET to provide a two-level "OR/NAND" logic circuit. In a third embodiment, the outputs from a pair of two-level logic circuits are joined to provide a three-level "OR/NAND/WIRED-AND" logic circuit.

REFERENCES:
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patent: 3299291 (1967-01-01), Warner, Jr. et al.
patent: 3969632 (1976-07-01), Bobenrieth
patent: 4013896 (1977-03-01), Picquendar et al.
patent: 4028556 (1977-06-01), Cachier et al.
patent: 4038563 (1977-07-01), Zuleeg et al.
patent: 4160918 (1979-07-01), Nazarian et al.
patent: 4177390 (1979-12-01), Cappon
Electronic Design 5, Mar. 1, 1978, pp. 19: "Schottky-Diode/FET Logic Bring VLST into the Real World".
Van Tuyl et al., IEEE Journ. of Solid-State Circuits; vol. SC-9, No. 5, pp. 269-276; 10/74.
Zuleeg et al., IEEE Trans. on Electron Devices; vol. ED-25, No. 6, pp. 628-639; 6/78.
Washburn, "An Application of Boolean Algebra to the Design of Electronic Switching Circuits", pp. 380-389; 9/53.

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