Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1975-06-19
1976-10-19
Heyman, John S.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307214, 307313, 307317A, H03K 1908, H03K 1912, H03K 1934, H03K 1936
Patent
active
039873102
ABSTRACT:
A logic circuit uses an input Schottky diode of a first threshold and a clamp Schottky diode of a second threshold in combination with a high speed NPN switching transistor to form a simple high speed logic element. The novel use of two Schottky diodes of different threshold voltages provides a logic gate with a lower logic swing amenable with higher speed operation. Further, the operation of the logic gate is independent of the temperature characteristics of the NPN switching transistor. A PNP current source provides the drive current and load current for the logic gate in a simple manner which uses minimum chip area.
REFERENCES:
patent: 3349297 (1967-10-01), Crowell et al.
patent: 3719797 (1973-03-01), Andrews, Jr. et al.
gani et al., "Logic Circuit with Dual--Metal Schottky Barrier Diodes," IBM Tech. Discl.; vol. 17, No. 10, p. 2856; 3/1975.
Gani et al., "Dual--Diode Logic Gate and Oscillation Clamping Structure"; IBM Tech. Discl. Bull., vol. 17, No. 2, p. 414; 7/1974.
Park, "Polarity Hold Latch with Schottky Diode and Circuits"; IBM Tech. Discl. Bull.; vol. 16, No. 5, pp. 1634-1635; 10/1973.
Peltier Arthur William
Wisseman Leo L.
Anagnos Larry N.
Farley Robert A.
Heyman John S.
Motorola Inc.
Weiss Harry M.
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