Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – With doping profile to adjust barrier height
Patent
1997-04-25
1999-05-25
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
With doping profile to adjust barrier height
257509, 257484, 257483, 257474, H01L 2948, H01L 2956
Patent
active
059071796
ABSTRACT:
A Schottky diode assembly includes a Schottky contact formed on a semiconductor substrate and having a semiconductor region of a first conduction type, a metal layer disposed adjacently on the semiconductor region, a protective structure constructed on a peripheral region of the Schottky contact and a doped region in the semiconductor substrate having a second conduction type of opposite polarity from the first conduction type. The doped region extends from a main surface of the semiconductor substrate to a predetermined depth into the semiconductor substrate. The doped region of the protective structure has at least two different first and second doped portions located one below the other relative to the main surface of the semiconductor substrate. The first doped portion is at a greater depth and has a comparatively lesser doping, and the second doped portion has a comparatively higher doping and a slight depth adjacent the main surface of the semiconductor substrate.
REFERENCES:
patent: 4638551 (1987-01-01), Einthoven
patent: 4816879 (1989-03-01), Ellwanger
patent: 5539237 (1996-07-01), Todd et al.
patent: 5614755 (1997-03-01), Hutter et al.
Patent Abstracts of Japan No. 06252381 (Hideaki), dated Sep. 9, 1994.
Patent Abstracts of Japan No. 06268245 (Junji), dated Sep. 22, 1994.
Patent Abstracts of Japan No. 62281367 (Yasuo), dated Dec. 7, 1987.
Losehand Reinhard
Werthmann Hubert
Brown Peter Toby
Duong Hung Van
Greenberg Laurence A.
Lerner Herbert L.
Siemens Aktiengesellschaft
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