Patent
1986-08-08
1988-06-21
Larkins, William D.
357 67, 357 71, 357 34, H01L 2948, H01L 2348, H01L 2972
Patent
active
047528133
ABSTRACT:
A Schottky barrier diode and ohmic contact metallurgy which is especially suited for shallow-junction bipolar semiconductor devices. The metallurgy comprises a thin layer of an at least 95 atomic % pure Schottky metal disposed in the contact openings on a shallow-junction semiconductor device to a thickness of less than 850 angstroms. An electrically conducting barrier layer is then disposed over the thin Schottky metal layer, with the barrier layer being of a material which does not react with either the Schottky metal or the semiconductor material in the contact openings to thereby prevent semiconductor material from diffusing past the barrier layer. An electrical contact layer is then deposited over the barrier layer. The doping of the semiconductor material in the individual contact openings determines whether an ohmic contact or a Schottky barrier diode is formed. The resulting ohmic contact metal and Schottky barrier metal do not penetrate through to the shallow junction of the semiconductor device. Additionally, the Schottky barrier diodes maintain a desired barrier height despite repeated heat treatments.
REFERENCES:
patent: 3598997 (1971-08-01), Baertsch
patent: 4316209 (1982-02-01), Ho et al.
patent: 4356622 (1982-11-01), Widmann
patent: 4638551 (1987-01-01), Einthoven
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"Refractory silicides for integrated circuits" by Murarka, J. Vac Sci Technol., vol 17, No. 4, Jul./Aug. 1980.
Bhatia Harasaran S.
Bhatia Satya P.
de Vries Cyril P.
Grose Douglas A.
Ellis William T.
International Business Machines - Corporation
Josephs David R.
Larkins William D.
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