Schottky diode and method of manufacture

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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Details

C438S167000, C438S169000, C438S534000, C438S570000, C257SE21359, C257SE21368

Reexamination Certificate

active

07820473

ABSTRACT:
A Schottky diode capable of sustaining a voltage of greater than about 250 volts and a method for its manufacture. An epitaxial layer of N-type conductivity is disposed on a semiconductor substrate of N-type conductivity. A guard ring of P-type conductivity extends into the epitaxial layer from its surface. A stacked structure is formed on a portion of the guard ring and a portion of the epitaxial layer. The stacked structure includes a layer of semi-insulating semiconductor material disposed on a layer of dielectric material. A first metal layer is formed on the portion of the epitaxial layer adjacent a first side of the stacked structure and on a first portion of the stacked structure. A second metal layer is formed on the portion of the epitaxial layer adjacent a second side of the stacked structure and on a second portion of the stacked structure.

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