Schottky diode and method of manufacture

Details Schottky diode and method of manufacture Schottky diode and method of manufacture

2007-10-09

2007-10-09

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Including diode

C257SE21357, C257SE27040

Reexamination Certificate

active

11084471

ABSTRACT:
A Schottky diode capable of sustaining a breakdown voltage of greater than about 250 volts and a method for its manufacture. An epitaxial layer disposed on a semiconductor substrate has a thickness of at least about 15 micrometers and an impurity concentration ranging from about 1×1014atoms per cubic centimeter to about 1×1015atoms per cubic centimeter. A guard ring extends from about 3 micrometers to about 15 micrometers into the epitaxial layer. A dielectric material is formed over the epitaxial layer and a portion of the dielectric material is removed to expose a portion of the guard ring and a portion of the epitaxial layer within the guard ring. An electrically conductive material is formed over the exposed portion of the epitaxial layer and an electrically conductive material is formed in contact with a bottom surface of the semiconductor substrate.

REFERENCES:
patent: 4357178 (1982-11-01), Bergeron et al.
patent: 4720734 (1988-01-01), Amemiya et al.
patent: 4899199 (1990-02-01), Gould
patent: 5060047 (1991-10-01), Jaume et al.
patent: 5075740 (1991-12-01), Ohtsuka et al.
patent: 5614755 (1997-03-01), Hutter et al.
patent: 5859465 (1999-01-01), Spring et al.
patent: 6624472 (2003-09-01), Hurkx et al.
patent: 6660570 (2003-12-01), Kim et al.

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