Schottky diode

Details Schottky diode Schottky diode

2005-04-26

2005-04-26

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

Specified materials

C257S109000, C257S485000

Reexamination Certificate

active

06885077

ABSTRACT:
A Schottky diode has a Schottky junction formed by a thin metal layer and/or metal silicide layer at the top side of a doped well in a semiconductor body or substrate. In contrast to the fabrication of low-impedance contacts on CMOS wells, a metal, to be precise titanium in the preferred embodiment, is applied not to a highly doped contact region but to the lightly doped semiconductor material of the doped well, for example an HV well for the fabrication of high-voltage transistors.

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