Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – In integrated structure
Reexamination Certificate
2011-03-29
2011-03-29
Wilson, Allan R (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
In integrated structure
C257S281000, C257SE29271, C438S167000
Reexamination Certificate
active
07915704
ABSTRACT:
Improved Schottky diodes (20) with reduced leakage current and improved breakdown voltage are provided by building a JFET (56) into the diode, serially located in the anode-cathode current path (32). The gates of the JFET (56) formed by doped regions (38, 40) placed above and below the diode's current path (32) are coupled to the anode (312) of the diode (20), and the current path (32) passes through the channel region (46) of the JFET (56). Operation is automatic so that as the reverse voltage increases, the JFET (56) channel region (46) pinches off, thereby limiting the leakage current and clamping the voltage across the Schottky junction (50) at a level below the Schottky junction (50) breakdown. Increased reverse voltage can be safely applied until the device eventually breaks down elsewhere. The impact on device area and area efficiency is minimal and the device can be built using a standard fabrication process so that it can be easily integrated into complex ICs.
REFERENCES:
patent: 4513309 (1985-04-01), Cricchi
patent: 5929502 (1999-07-01), Beasom
patent: 6423986 (2002-07-01), Zhao
patent: 7064407 (2006-06-01), Mallikarjunaswamy
patent: 7282386 (2007-10-01), Khemka et al.
patent: 7355260 (2008-04-01), Khemka et al.
patent: 7416929 (2008-08-01), Mazzola et al.
patent: 2002/0127787 (2002-09-01), Huang et al.
patent: 2008/0121895 (2008-05-01), Sheppard et al.
patent: 2010/0032731 (2010-02-01), Babcock et al.
Blomberg Daniel J.
Lin Xin
Zuo Jiang-Kai
Freescale Semiconductor Inc.
Ingrassia Fisher & Lorenz P.C.
Wilson Allan R
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