Schottky diode

Fishing – trapping – and vermin destroying

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Details

437177, 437208, 437906, H01L 21265, H01L 2144, H01L 2118

Patent

active

051358786

ABSTRACT:
A Schottky diode has a metal lead electrically connected to the Schottky contact layer wherein the metal lead is metallurgically bonded to the diode for increased reliability, the diode having a Ta--Si--N barrier layer.

REFERENCES:
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patent: 3698080 (1972-10-01), Berner
patent: 4110488 (1978-08-01), Risko
patent: 4400868 (1983-08-01), Antypas et al.
patent: 4510672 (1985-04-01), Yakura
patent: 4765845 (1988-08-01), Takada et al.
patent: 4876221 (1989-10-01), Hatada
patent: 4912543 (1990-03-01), Nepple et al.
patent: 4950623 (1991-08-01), Dishon
Neppl. et al., "Barrier Properties of TaSi.sub.2 in Contact with Al Metalization Thin Film and Interfaces II. Proceedings of the Symposium" Editor Baglin et al., pp. 587-592.
E. Kolawa et al., "Amorphous Ta--Si--N Thin-Film Alloys as Diffusion Barrier in Al/Si Metallizations", J. Vac. Sci. Technol. A 8(3), 3006, May-Jun., 1990.
M-A. Nicolet et al., "Diffusion Barriers in Layered Contact Structures", J. Vac. Sci. Technol., 19(3), 786, Sep./Oct. 1981.

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