Metal working – Method of mechanical manufacture – Electrical device making
Patent
1978-06-02
1980-06-10
Esposito, Michael F.
Metal working
Method of mechanical manufacture
Electrical device making
427 84, 427 91, 427125, 357 15, 156662, 156638, 156664, H01L 2948
Patent
active
042065402
ABSTRACT:
A schottky diode and process of manufacture therefor is disclosed wherein a schottky junction is formed between a high work function metal, typically molybdenum, and a single crystal intermetallic alloy of either palladium or platinum with silicon. The intermetallic alloy is formed by sintering palladium or platinum with silicon at the surface of an epitaxial silicon layer, and then removing, by etching, all of the silicide which is formed. The intermetallic layer remains after the etching process. When using platinum as the metal to form to silicide, the platinum is sheathed with molybdenum before sintering. A titanium layer is placed between the surface of the high work function metal and the outer conductive layers used to permit soldering of the finished wafer or chip in place to avoid degradation of the junction during solder-down.
REFERENCES:
patent: 3515583 (1970-06-01), Inoue
patent: 3669730 (1972-06-01), Lepselter
patent: 3906540 (1975-09-01), Hollins
patent: 3938243 (1976-02-01), Rosuold
patent: 3968272 (1976-07-01), Anud
patent: 4110488 (1978-08-01), Risko
Esposito Michael F.
International Rectifier Corporation
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