Schottky carrier diode with plasma treated layer

Details Schottky carrier diode with plasma treated layer Schottky carrier diode with plasma treated layer

1996-08-23

1997-09-30

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

To compound semiconductor

257473, 257483, 257484, 257496, 257623, H01L 2358

Patent

active

056729049

ABSTRACT:
A Schottky barrier diode having improved breakdown characteristics has an n.sup.+ semiconductor layer and an n.sup.- semiconductor layer provided on the n.sup.+ semiconductor layer. The n.sup.- semiconductor layer is configured to form a mesa. An insulating layer is formed so as to expose the upper surface of the mesa. An anode electrode is provided on the exposed surface and a side surface of the mesa, while a cathode is electrically connected to the n.sup.+ layer. A plasma treated layer is provided in the n.sup.- semiconductor layer so as to extend inwardly from at least a portion of the side surface of the mesa.

REFERENCES:
patent: 3849789 (1974-11-01), Cordes et al.
patent: 3923975 (1975-12-01), Calviello
patent: 4310362 (1982-01-01), Roche et al.
patent: 4720734 (1988-01-01), Amemiya et al.

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