Schottky barrier type solid-state element

Details Schottky barrier type solid-state element Schottky barrier type solid-state element

1978-08-21

1980-08-19

Esposito, Michael F.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 86, 427 88, 427 90, 427 91, 427123, 427125, 427 84, 29589, 29590, 357 15, 357 30, 148175, C23C 1500, C09K 1110

Patent

active

042184959

ABSTRACT:
A Schottky barrier type solid-state element and a method of producing the same, the Schottky barrier type solid-state element comprising a Schottky barrier type element portion consisting of a metallic board and a semiconductor film layer provided on the metallic board, the metallic board being formed of such a metal as can form a Schottky barrier between itself and the semiconductor film layer, and a semiconductor-side terminal electrode provided on the external surface of the semiconductor film layer so as to obtain an ohmic contact therewith, wherein at least the semiconductor film layer is formed by what is called the ionized-cluster-beam deposition process.

REFERENCES:
patent: 4066527 (1978-01-01), Takagi et al.
patent: 4091138 (1978-05-01), Takagi et al.
patent: 4098919 (1978-07-01), Morimoto et al.
patent: 4120700 (1978-10-01), Morimoto
patent: 4140610 (1979-02-01), Morimoto
Takagi, "An Evaluation . . . Beam Depositions", Thin Solid Films (4-1976) pp. 207-217.
Takagi et al., Int'l Electron Devices Meeting, Tech. Digest Prep of Semiconductor . . . Epitaxy (12-1976) pp. 605-608.
Tagaki et al., (Conf. Record, IEEE Photovoltaic Specialist (11-1976) pp. 55-64.
Tagaki et al., J. Vac. Sci. Technol., vol. 12, No. 6, 11/12-75 Ionized Cluster Beam Deposition pp. 1128-1134.

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