Schottky barrier type semiconductor device

Details Schottky barrier type semiconductor device Schottky barrier type semiconductor device

1976-04-09

1977-12-06

Wojciechowicz, Edward J.

357 52, 357 53, 357 91, H01L 2948, H01L 2934, H01L 2940

Patent

active

040620336

ABSTRACT:
A Schottky barrier is formed between a semiconductor substrate and a metal contact and stabilized by a polycrystalline silicon layer containing oxygen in the range between 2 and 45 atomic percent and surrounding a peripheral portion of the metal contact to improve the breakdown voltage characteristics of the device. The invention is applicable to Schottky barrier type diodes, bipolar transistors, field effect transistors and so on.

REFERENCES:
patent: 3586542 (1971-06-01), MacRae
patent: 3977019 (1976-08-01), Matsushita et al.

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