Schottky barrier tunnel single electron transistor and...

Details Schottky barrier tunnel single electron transistor and... Schottky barrier tunnel single electron transistor and...

2007-09-11

2007-09-11

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

C257S471000, C257S472000, C257S473000

Reexamination Certificate

active

11196180

ABSTRACT:
Provided are a Schottky barrier tunnel single electron transistor and a method of manufacturing the same that use a Schottky barrier formed between metal and semiconductor by replacing a source and a drain with silicide as a reactant of silicon and metal, instead of a conventional method of manufacturing a single electron transistor (SET) that includes source and drain regions by implanting dopants such that an artificial quantum dot is formed in a channel region. As a result, it does not require a conventional PADOX process to form a quantum dot for a single electron transistor (SET), height and width of a tunneling barrier can be artificially adjusted by using silicide materials that have various Schottky junction barriers, and it is possible to improve current driving capability of the single electron transistor (SET).

REFERENCES:
patent: 6339005 (2002-01-01), Bryant et al.
patent: 6495890 (2002-12-01), Ono
patent: 2002 237602 (2002-08-01), None
patent: 100434534 (2000-05-01), None
patent: 1020030073098 (2003-09-01), None
patent: 1020040015417 (2004-02-01), None
patent: 1020040022605 (2004-03-01), None
‘Fabrication Method for IC-Oriented Si Single-Electron Transistors’ Ono et al., IEEE Transactions on Electron Devices, vol. 47, No. 1, Jan. 2000, pp. 147-153.

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