Schottky barrier rectifier including schottky barrier regions of

Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – With doping profile to adjust barrier height

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257478, 257594, 257621, 257622, H01L 2948

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active

052626687

ABSTRACT:
A Schottky barrier rectifier includes regions of different Schottky barrier heights. Preferably, alternating regions of relatively high and relative low barrier heights are provided on a semiconductor substrate and are electrically connected in parallel to form a single Schottky barrier rectifier. The alternating regions may be provided by laterally spaced apart regions of a first metal on the semiconductor substrate and a layer of a second metal on the regions of the first metal and on the semiconductor substrate between the regions of first metal. Alternatively, a plurality of spaced apart barrier altering regions, such as a plurality of shallow implants, are formed in the semiconductor substrate, and a continuous metal layer is formed on the semiconductor substrate. In yet another embodiment, plurality of laterally spaced apart trenches are formed in the semiconductor substrate. First metal regions are formed at the bottom of each trench and a second metal layer is formed on the trench bottoms, trench walls and on the substrate face between the trenches. Still alternatively, a barrier height altering region, such as a shallow implant, is formed in the semiconductor substrate adjacent the trench bottoms, and a metal layer is formed on the trench bottoms, on the trench walls and on the first face between the trenches.

REFERENCES:
patent: 4646115 (1987-02-01), Shannon et al.
patent: 5040034 (1991-08-01), Murakami et al.
Modern Power Devices, B. J. Baliga, John Wiley and Sons, Inc., 1987, pp. 406-451.
Semiconductor Devices, Physics and Technology, S. M. Sze, John Wiley & Sons, 1985, p. 163.

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