Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2007-07-03
2007-07-03
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S266000, C257S272000, C257S476000, C257SE33051, C257SE29148, C257SE29338
Reexamination Certificate
active
10869718
ABSTRACT:
A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second doped region is disposed between the first doped region and the first conductive layer. The plurality of third doped regions are disposed in the second doped region. The first doped region of the semiconductor is heavily doped with a first type of dopant (e.g., phosphorous or arsenic). The second doped region is moderately doped with the first type of dopant. The plurality of third doped regions are moderately to heavily doped with a second type of dopant.
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Lin Chong-Ming
Yu Ho-Yuan
Morgan & Lewis & Bockius, LLP
Ngo Ngan V.
Qspeed Semiconductor Inc.
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