Schottky barrier photodetectors

Details Schottky barrier photodetectors Schottky barrier photodetectors

2006-04-11

2006-04-11

Owens, Douglas W (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C385S002000, C385S015000, C359S034000

Reexamination Certificate

active

07026701

ABSTRACT:
A Schottky barrier photodetector comprises a waveguide structure formed by a thin strip of material having a relatively high free charge carrier density, for example a conductor or certain classes of highly-doped semiconductor, surrounded by material having a relatively low free charge carrier density, the material on at least one side of the strip comprising a semiconductor, the strip having finite width and thickness with dimensions such that optical radiation couples to the strip and propagates along the length of the strip as a plasmon-polariton wave, light for detection being coupled to one end of the strip to propagate along the strip as said plasmon-polariton wave, ohmic contact means applied to the semiconductor material and at least one electrode means connected to the strip for applying bias to the Schottky barrier and extracting a photodetector current corresponding to the light applied to the photodetector. Where the strip of material is a flat, thin strip, the device will be polarisation dependent. Substantially polarisation-independent operation maybe achieved by using a strip whose width is of the same order as its thickness.

REFERENCES:
patent: 3638300 (1972-02-01), Foxhall et al.
patent: 4394571 (1983-07-01), Jurisson
patent: 4531055 (1985-07-01), Shepard et al.
patent: 4533933 (1985-08-01), Pellegrini et al.
patent: 4544939 (1985-10-01), Kosonocky et al.
patent: 4857973 (1989-08-01), Yang et al.
patent: 4876586 (1989-10-01), Dyck et al.
patent: 4908686 (1990-03-01), Maserjian
patent: 5625729 (1997-04-01), Brown
patent: 5648297 (1997-07-01), Lin et al.
patent: 5685919 (1997-11-01), Saito et al.
patent: 5977718 (1999-11-01), Christensen
patent: 6178275 (2001-01-01), Nerses et al.
patent: 6442321 (2002-08-01), Berini
patent: 2004/0081398 (2004-04-01), Jette et al.
patent: 2 186 144 (1987-08-01), None
Elabd et al. “Theory and Measurements of Photoresponse for Thin Film Pd2Si and PtSI Infrared Schottky-Barrier Detectors With Optical Cavity,” RCA Review 43, pp. 569-589, 1982.
Mercer et al. “A Diffusion Model for the Internal Photoresponse of PtSi/p-Si Schottky Barrier Diobes,” J. Appl. Phys. 65 (12), Jun. 15, 1989, pp 5035-5042.
S. M. Sze, Physics of Semiconductor Devices, 2nd ed. Wiley, New York, 1981, p. 262 and 291-292.
Duboz et al. “Hot-electron Transport in Epitaxial CoSi2 Films,” Physical Review B, Vol. 44, No. 15, Oct. 15, 1991, pp 8061-8067.
Wu et al. “Optical Properties of Epitaxial CoSi2/Si and CoSi2 Particles in Si from 0.062 to 2.76 eV,” J. Appl. Phys. 71 (11), Jun. 1, 1992, pp5601-5605.
Quinn “Range of Excited Electrons in Metals,” Physical Review vol. 126, No. 4, May 15, 1962, pp 1453-1457.
E. D. Palik, Handbook of Optical Constants of Solids, Academic Press, Inc., Orlando, 1985.
Charbonneau et al. “Experimental Observation of Plasmon-Politron Waves Supported by a Thin Metal Film of Finite Width,” vol. 25, No. 11, 2000, Optics Letters, pp. 844-846.

Affiliated with

Also associated with

Rating

Schottky barrier photodetectors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Schottky barrier photodetectors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Schottky barrier photodetectors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3572042