Schottky-barrier MOS devices

Details Schottky-barrier MOS devices Schottky-barrier MOS devices

1986-01-21

1987-05-12

Carroll, J.

357 231, 357 42, 357 67, 357 71, 357 88, 357 89, 357 91, H01L 2948, H01L 2978, H01L 2348

Patent

active

046654143

ABSTRACT:
Schottky-barrier MOS and CMOS devices are significantly improved by selectively doping the regions surrounding the Schottky-barrier source and drain contacts. For p-channel devices, acceptor doping is carried out in either a one-step or a two-step ion implantation procedure. For n-channel devices, donor doping is carried out in a two-step procedure. In each case, current injection into the channel is enhanced and leakage to the substrate is reduced while still maintaining substantial immunity to parasitic bipolar transistor action (MOS devices) and to latchup (CMOS devices).

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Darley et al., "Optimization of Self-Aligned Silicon MESFETS for VLSI at Micron Dimensions", IEDM Tech. Digest, Wash., DC USA, Dec. 8-10, 1980, pp. 34-37.

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