Schottky barrier infrared detector array with increased effectiv

Details Schottky barrier infrared detector array with increased effectiv Schottky barrier infrared detector array with increased effectiv

1997-06-25

1998-08-18

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257450, 257451, H01L 27146, H01L 3107, H01L 31108

Patent

active

057961557

ABSTRACT:
An improvement of the design of Schottky barrier infrared detector (SBIR) arrays, as taught by Roosild, et al. We describe modifications of the detector unit cell design which maximize the fraction of detector electrode area exhibiting full spectral emission response. In particular we recommend changes in the impurity density profile, or "doping", under the Schottky electrode. The new detector cell design can result in a two-fold increase in the photoemission of SBIR arrays, which have small detector cell dimensions.

REFERENCES:
patent: 3902066 (1975-08-01), Roosild et al.
patent: 4531055 (1985-07-01), Shepherd, Jr. et al.
patent: 4544939 (1985-10-01), Kosonocky et al.
patent: 4866497 (1989-09-01), Kosonocky
patent: 4875084 (1989-10-01), Tohyama
patent: 5565676 (1996-10-01), Tanabe
Tohyama et al IEEE Trans. on Elec Dev. vol. 41 No. 9 Sep. 94 "A Silicon Homojunction . . . N.sup.++ Layer".

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