Schottky barrier infrared detector

Batteries: thermoelectric and photoelectric – Thermoelectric – Radiation pyrometer

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357 15, 357 61, 136255, 427178, H01L 2956, H01L 2714, H01L 3528

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active

048643785

ABSTRACT:
A method and resultant device is described for fabricating iridium silicide Schottky IR detectors in which a thin intermediate film of platinum is formed between the conventional iridium outer layer over a p-type silicon substrate with or without an n-type guard ring. After thermal treatment, an iridium platinum silicide region is formed in the silicon substrate. The unreated iridium/platinum outside the device region is removed using a dry-etching process.

REFERENCES:
patent: 4398344 (1983-08-01), Gould
patent: 4531055 (1985-07-01), Shepherd, Jr. et al.
patent: 4533933 (1985-08-01), Pellegrini et al.
Capone et al., "Evaluation of a Schottky IRCCD Staring Mosaic Focal Plane" 22nd International Technical Sym. SPIE San Diego, pp. 120-131, Aug. 1978.
"Design and Characterization of a Schottky Infrared Charge Coupled Device (IRCCD) Focal Plane Array", Capone et al., Optical Engineering, vol. 21, No. 5, pp. 945-950, (Sep./Oct. 1982).
F. Sheperd and A. Yang, IEDM Tech. Dig., 310-313 (1973).
P. Pellegrini et al., IEDM Tech. Dig., 157-159, (1982), "IrSi Schottky Barrier Diodes for Infrared Detection".
M. Kimata et al., "Platinum Silicide Schottky-Barrier Ir-CCD Image Sensors", Mitsubishi Electric Corp. Technical Research and Development Institute, Japan Defense Agency.
Silverman et al., "Characterization of Thin PtSi/p-Si Schottky Diodes".
"IrSi Schottky-Barrier Infrared Image Sensor", Yutani et al., 124-127, IEDM 87.

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