Schottky-barrier gate gallium arsenide field effect devices

Details Schottky-barrier gate gallium arsenide field effect devices Schottky-barrier gate gallium arsenide field effect devices

1980-07-25

1982-06-22

Wojciechowicz, Edward J.

357 22, 357 55, 357 61, H01L 2948

Patent

active

043365493

ABSTRACT:
A Schottky-barrier gate gallium arsenide field effect structure is made using a self-aligned gate fabrication technique. The resulting device includes source and drain regions, which are parts of a conducting channel formed through ion implantation or epitaxial growth or a combination of the two. A gate is formed on the same channel by first etching a portion of the channel between the source and the drain regions to form a gate window which then receives a Schottky-barrier gate electrode.

REFERENCES:
patent: 4040168 (1977-08-01), Huang
patent: 4106044 (1978-08-01), Yoshida et al.

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