Patent
1990-08-17
1992-04-28
Jackson, Jr., Jerome
357 34, 357 58, 357 59, H01L 2948, H01L 2956, H01L 2972
Patent
active
051092565
ABSTRACT:
A Schottky diode is formed with a layer of intrinsic polysilicon separating a metal silicide layer from an n conductivity type active region. This structure avoids the necessity for a process step which opens a window in the intrinsic polysilicon layer and reduces the portion of surface area needed for formation of a Schottky diode, compared to previous devices. The Schottky diode can be formed as part of an overall process for forming an integrated circuit and can be positioned in parallel across the collector/base junction of a bipolar transistor to form a Schottky barrier diode-clamped transistor.
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Colwell Robert C.
Hughes Richard L.
Jackson, Jr. Jerome
National Semiconductor Corporation
Rappaport Irving
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