Schottky barrier diodes

Details Schottky barrier diodes Schottky barrier diodes

1984-01-30

1986-11-18

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29589, 357 15, 357 67, 427 84, 148 15, 148DIG19, 148DIG139, 148DIG147, H01L 2948, H01L 2956

Patent

active

046227369

ABSTRACT:
A Schottky barrier diode is made from a substrate of semiconductor material by forming, on a major surface of the wafer, a layer of dielectric material defining a restricted opening through which the semiconductor material is exposed. A metal which forms with the semiconductor material a single phase compound which is inherently stable at temperatures up to 600 deg. C. is deposited into the opening, into contact with the exposed semiconductor material. By heating the substrate and the metal deposited thereon, the metal reacts with the semiconductor material to form a body of the single phase compound. A layer of refractory metal which reacts with the dielectric material is deposited over the dielectric material and the body of single phase compound.

REFERENCES:
patent: 3560809 (1971-02-01), Terakado
patent: 3891479 (1975-06-01), Zwernemann
patent: 4062103 (1977-12-01), Yamagishi
patent: 4310362 (1982-01-01), Roche et al.
patent: 4395813 (1983-08-01), Ruth et al.

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