Schottky barrier diode with ohmic portion

Details Schottky barrier diode with ohmic portion Schottky barrier diode with ohmic portion

1992-03-30

1994-04-26

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257472, 257473, 257916, 257484, 257750, H01L 2948

Patent

active

053069439

ABSTRACT:
A Schottky barrier diode includes a semiconductor substrate, an ohmic electrode formed on a first region of the semiconductor substrate, and a Schottky metal electrode formed on a second region spaced apart from the first region on the semiconductor substrate. The Schottky electrode includes at least one ohmic portion forming an ohmic contact with the semiconductor substrate, whereby rectifying characteristics of the Schottky barrier diode are improved.

REFERENCES:
patent: 2885608 (1959-05-01), Bradley
patent: 4646115 (1987-02-01), Shannon et al.
patent: 4729966 (1988-03-01), Koshino et al.
patent: 4899199 (1990-02-01), Gould

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