Schottky barrier diode with guard ring

Details Schottky barrier diode with guard ring Schottky barrier diode with guard ring

1984-06-08

1986-08-19

James, Andrew J.

Gas separation

557 51, 557 52, 557 59, 557 68, H01L 2948

Patent

active

046072705

ABSTRACT:
A guard-ring-equipped Schottky barrier diode, which has a shortened reverse recovery time and an increased withstand voltage, has a Schottky barrier layer formed on a semiconductor substrate, of a first conductivity type, and a guard ring, which has a second conductivity type, formed on surface of the substrate isolated from but surrounding the periphery of the barrier layer. An insulative film with an opening over part of the guard ring is formed over the region between the edge of the Schottky barrier layer and the guard ring. A high-resistance layer is formed in this opening and is connected with the Schottky barrier layer by a metal electrode. The width of the substrate between the guard ring and the edge of the barrier layer is less than the sum of the widths of the depletion layers of the guard ring and the barrier layer at the time when the lower voltage of either the barrier layer breakdown voltage or the guard ring breakdown voltage is applied.

REFERENCES:
patent: 3694719 (1972-09-01), Saxena
patent: 3890698 (1975-06-01), Clark
patent: 4157563 (1979-06-01), Bosselaar
IBM Technical Disclosure Bulletin, vol. 20 #8, p. 3197, Jan. 1978 "Schottky Barrier Diode With Isolated Guard Ring" by Jambotkar.

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