Metal treatment – Compositions – Heat treating
Patent
1980-11-10
1982-11-02
Roy, Upendra
Metal treatment
Compositions
Heat treating
29578, 29579, 148187, 357 15, 357 91, 427 84, 427 88, H01L 2948, H01L 21265
Patent
active
043571786
ABSTRACT:
A self-isolated Schottky Barrier diode structure and method of fabrication are disclosed for generating a device having controlled characteristics. An opening is made through an oxide layer over a central region of an n-type semiconductor substrate. The opening has inclined sidewalls over an annular region surrounding the central region of the substrate. An n-type dopant layer is ion implanted through the opening and the surrounding oxide layer. This controls the barrier height for the Schottky Barrier diode. In the region of the substrate surrounding the annular region, where the ion implantation takes place through the full thickness of the oxide, the lifetime of minority carriers is controlled. This has the effect of minimizing PNP parasitic transistor action. A Schottky Barrier contact is formed in the opening through the oxide layer creating a rectifying junction with the semiconductor substrate in the central region.
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Bergeron David L.
Fleming Daniel J.
Stephens Geoffrey B.
Hoel John E.
IBM Corporation
Roy Upendra
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