Schottky barrier diode semiconductor device

Details Schottky barrier diode semiconductor device Schottky barrier diode semiconductor device

2006-04-25

2006-04-25

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

Reexamination Certificate

active

07034376

ABSTRACT:
A Schottky barrier diode in which a p+-type semiconductor layer is provided in an n−-type epitaxial layer can realize lowering the forward voltage VF without considering leak current IR. However, when compared with a normal Schottky barrier diode, the forward voltage VF is generally high. When a Schottky metal layer is suitably selected, although the forward voltage VF can be reduced, there is a limit in further reduction. On the other hand, when the resistivity of the n−-type semiconductor layer is reduced, although the forward voltage VF can be realized, there is a problem that breakdown voltage is deteriorated. In a semiconductor device of the invention, a second n−-type semiconductor layer having a low resistivity is laminated on a first n−-type semiconductor layer capable of securing a specified breakdown voltage. P+-type semiconductor regions are made to have depths equal to or slightly deeper than the second n−-type semiconductor layer. By this, in a Schottky barrier diode in which leak current IR can be suppressed by pinch off of a depletion layer, the forward voltage VF can be reduced and the specified breakdown voltage can be secured.

REFERENCES:
patent: 5017976 (1991-05-01), Sugita
patent: 6426541 (2002-07-01), Chang et al.
patent: 2004/0061195 (2004-04-01), Okada et al.
patent: 0077004 (1983-04-01), None
patent: 2004-127968 (2004-04-01), None
patent: 501203 (2002-09-01), None

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