Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier
Reexamination Certificate
2009-02-03
2010-12-14
Estrada, Michelle (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
C257S155000, C257S449000, C257SE51009, C257SE33051, C257SE29148
Reexamination Certificate
active
07851881
ABSTRACT:
A merged PN/Schottky diode is provided having a substrate of a first conductivity type and a grid of doped wells of the second conductivity type embedded in the substrate. A Schottky barrier metal layer makes a Schottky barrier contact with the surface of the substrate above the grid. Selected embedded wells in the grid make a Schottky barrier contact to the Schottky barrier metal layer, while most embedded wells do not. The diode forward voltage drop is reduced for the same diode area with reverse blocking benefits similar to a conventional JBS structure.
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Odekirk Bruce
Sdrulla Dumitru
Zhao Feng
Estrada Michelle
Marger & Johnson & McCollom, P.C.
Microsemi Corporation
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