Schottky barrier diode having chargeable floating gate

Details Schottky barrier diode having chargeable floating gate Schottky barrier diode having chargeable floating gate

1976-01-07

1976-12-07

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 13, 357 23, 357 52, 357 53, 357 59, 307238, H01L 2948

Patent

active

T09530053

ABSTRACT:
A Schottky barrier diode having an encircling floating polycrystalline silicon gate which becomes charged upon avalanche breakdown of the diode. The gate is self-aligned with respect to the Schottky barrier diode metal so that the gate uniformly overhangs the depletion area in the semiconductor when the diode is reverse biased. The gate is insulated from the semiconductor material and from the metal by dielectric layers including silicon dioxide and silicon nitride.

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