Schottky barrier diode for alpha particle resistant static rando

Details Schottky barrier diode for alpha particle resistant static rando Schottky barrier diode for alpha particle resistant static rando

1988-12-20

1990-02-20

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 52, 357 34, 365175, H01L 2948

Patent

active

049030876

ABSTRACT:
An improved Schottky barrier diode for increasing the alpha particle resistance of static random access memories includes an extra implanted N-type region at the surface of the epitaxial layer to increase the impurity concentration there to about 1.times.10.sup.19 atoms per cubic centimeter. In one device, arsenic is employed to overcompensate a guard ring where the Schottky diode is to be formed, while in another device phosphorus is employed and the guard ring is not overcompensated. The resulting Schottky diodes, when employed in the static random access memory cells, dramatically increase the alpha particle resistance of such cells, while also substantially decreasing the access time.

REFERENCES:
patent: 3924264 (1975-12-01), Dorler et al.
patent: 4538244 (1985-08-01), Sugo et al.
IBM Technical Disclosure Bulletin, Vol. 18 #6, p. 1829, Nov., 1975 by Freed et al.

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