Schottky barrier diode clamp transistor

Details Schottky barrier diode clamp transistor Schottky barrier diode clamp transistor

1989-04-04

1990-07-24

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307454, 357 15, 357 35, 357 36, H03K 19013, H03K 19088, H03K 19092, H03K 19084

Patent

active

049437429

ABSTRACT:
A semiconductor device used for, particularly, an output stage of a logic circuit is formed by a Schottky.barrier.diode clamping transistor. A clamping circuit is provided between a collector and a base for clamping a collector potential. The clamping circuit is formed by a Schottky.barrier.diode (SBD) and a series connected resistance coupled to the Schottky.barrier.diode. A collector resistance is divided by resistance division using the series resistance (FIG. 6).

REFERENCES:
patent: 4129790 (1978-12-01), Gani et al.
patent: 4165470 (1979-08-01), Fulkerson et al.
patent: 4178603 (1979-12-01), Muendel
patent: 4330723 (1982-05-01), Griffith
patent: 4595942 (1986-06-01), Lohstroh
patent: 4682057 (1987-07-01), Doyle
patent: 4728824 (1988-03-01), Van Zantel
Heald et al, "Design of Schottky-Barrier Diode Clamped Transistor Layouts", IEEE JSSC, vol. SC-8, No. 4, pp. 269-275, Aug. 1973.
Lohstroh et al, "Oxide Isolated ISL Technologies", IEEE Electron Device Letters, vol. EDL-2, No 2, pp. 29-31, Feb. 1981.

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