Schottky barrier diode and method thereof

Details Schottky barrier diode and method thereof Schottky barrier diode and method thereof

2005-09-30

2008-03-11

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Forming schottky junction

C257SE21351

Reexamination Certificate

active

07341932

ABSTRACT:
Pt
−GaN Schottky barrier diodes are disclosed that are particularly suited to serve as ultra-violet sensors operating at wavelengths below 200 nm. The Pt
−GaN Schottky barrier diodes have very large active areas, up to 1 cm2, which exhibit extremely low leakage current at low reverse biases. Very large area Pt
−GaN Schottky diodes of sizes 0.25 cm2and 1 cm2have been fabricated from n−
+GaN epitaxial layers grown by vapor phase epitaxy on single crystal c-plane sapphire, which showed leakage currents of 14 pA and 2.7 nA, respectively for the 0.25 cm2and 1 cm2diodes both configured at a 0.5V reverse bias.

REFERENCES:
patent: 6057565 (2000-05-01), Yoshida et al.
patent: 6420736 (2002-07-01), Chen et al.
patent: 2004/0080010 (2004-04-01), Parikh et al.
patent: 2005/0001235 (2005-01-01), Murata et al.
patent: 2005/0062048 (2005-03-01), Hayashi et al.
Shahid Aslam et al., “Large Area Pt
-GaN Schottky barrier diode with extremely low leakage current”, EDL Manuscript No. 1698, May 20, 2003, pp. 1-3, USA.

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