Schottky barrier diode and method of making the same

Details Schottky barrier diode and method of making the same Schottky barrier diode and method of making the same

2006-07-18

2006-07-18

Dickey, Thomas L. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

C257S155000, C257S671000

Reexamination Certificate

active

07078780

ABSTRACT:
A power Schottky rectifier device having a plurality of first trenches filled in with an un-doped polycrystalline silicon layer and each first trenches also has a p-region beneath the bottom of said first trenches to block out reverse current while a reverse biased is applied and to reduce minority carrier while forward biased is applied. Thus, the power Schottky rectifier device can provide first fast switch speed. The power Schottky rectifier device is formed with termination region at an outer portion of the substrate. The manufacture method is also provided.

REFERENCES:
patent: 2002/0008237 (2002-01-01), Chang et al.
patent: 2004/0256690 (2004-12-01), Kocon

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