Schottky barrier diode and method for making the same

Details Schottky barrier diode and method for making the same Schottky barrier diode and method for making the same

2011-07-05

2011-07-05

Nguyen, Thinh T (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S073000, C257SE29104, C438S572000

Reexamination Certificate

active

07973318

ABSTRACT:
A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed.

REFERENCES:
patent: 7507650 (2009-03-01), Nakamura et al.
patent: 2002/0019117 (2002-02-01), Nagasawa
patent: 2003/0183895 (2003-10-01), Okamura et al.
patent: 2007/0134897 (2007-06-01), Nakamura et al.
patent: 02004022878 (2004-01-01), None
patent: 2004-221513 (2004-08-01), None
patent: 2005-311347 (2005-11-01), None
patent: WO 2007/094421 (2007-08-01), None
Enghlish machine translation of Japanese Patent JP02004022878 A assigned to Uchida Jan. 2004.

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