Schottky barrier diode and integrated circuit using the same

Details Schottky barrier diode and integrated circuit using the same Schottky barrier diode and integrated circuit using the same

2008-05-20

2008-05-20

Quach, Tuan N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

C257S472000, C257SE29338

Reexamination Certificate

active

07375407

ABSTRACT:
A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a substrate; and a high-resistance region formed in the first semiconductor layer and the second semiconductor layer and having higher resistance than the first semiconductor layer and the second semiconductor layer. A Schottky electrode and an ohmic electrode spaced from each other are formed on the second semiconductor layer in a portion surrounded with the high-resistance region.

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