Schottky barrier diode and diode array

Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – To compound semiconductor

Reexamination Certificate

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Details

C257S471000, C257S473000, C257S475000, C257S476000, C257S480000, C257S483000, C257S484000, C257S485000, C257S486000, C257SE27068, C257SE29338

Reexamination Certificate

active

07612426

ABSTRACT:
A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a semiconductor substrate with a buffer layer formed between the first and second semiconductor layers and the semiconductor substrate. A Schottky electrode and an ohmic electrode spaced from each other are formed on the second semiconductor layer, and a back face electrode is formed on the back face of the semiconductor substrate. The Schottky electrode or the ohmic electrode is electrically connected to the back face electrode through a via penetrating through at least the buffer layer.

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patent: 7078743 (2006-07-01), Murata et al.
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patent: 2006/0170003 (2006-08-01), Saito et al.
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patent: 2003-282863 (2003-10-01), None
patent: 2004-031896 (2004-01-01), None
Starikov et al., Metal—insulator—semiconductor Schottky barrier structures fabricated using interfacial BN layers grown on GaN and SiC for optoelectronic device applications, J. Vac. Sci. Tech. A 17, 1235-1238, 1999.
Eftekhari, Electrical characteristics of selenium-treated GaAs MIS Schottky diodes, Semicond. Sci. 8, 409-411, 1993.

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