Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – To compound semiconductor
Reexamination Certificate
2005-11-15
2009-11-03
Rose, Kiesha L. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
To compound semiconductor
C257S471000, C257S473000, C257S475000, C257S476000, C257S480000, C257S483000, C257S484000, C257S485000, C257S486000, C257SE27068, C257SE29338
Reexamination Certificate
active
07612426
ABSTRACT:
A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a semiconductor substrate with a buffer layer formed between the first and second semiconductor layers and the semiconductor substrate. A Schottky electrode and an ohmic electrode spaced from each other are formed on the second semiconductor layer, and a back face electrode is formed on the back face of the semiconductor substrate. The Schottky electrode or the ohmic electrode is electrically connected to the back face electrode through a via penetrating through at least the buffer layer.
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Tanaka Tsuyoshi
Ueda Daisuke
Uemoto Yasuhiro
Yanagihara Manabu
McDermott Will & Emery LLP
Panasonic Corporation
Rose Kiesha L.
Yang Minchul
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