Schottky barrier diode

Details Schottky barrier diode Schottky barrier diode

2006-06-13

2006-06-13

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

With means to prevent edge breakdown

C257S485000

Reexamination Certificate

active

07061067

ABSTRACT:
To reduce a reverse leakage current in a Schottky barrier diode with achieving a lower forward voltage Vf and a smaller capacitance than in the related art, a Schottky barrier diode includes a semiconductor layer of a first conductivity type, a first electrode which is a metal layer forming a Schottky contact with a main surface of the semiconductor layer, a second electrode forming an ohmic contact with an opposite main surface of the semiconductor layer, a buried layer of a second conductivity type formed within the semiconductor layer so as not to be in contact with the first electrode, where the second conductivity type has a different charge carrier from the first conductivity type, and a guard ring of the second conductivity type formed within the semiconductor layer so as to be in contact with the first electrode and also to surround the buried layer without contacting with the buried layer.

REFERENCES:
patent: 4206540 (1980-06-01), Gould
patent: 11-330498 (1999-11-01), None

Affiliated with

Also associated with

Rating

Schottky barrier diode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Schottky barrier diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Schottky barrier diode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3703995