Schottky barrier device and method of manufacture

Metal working – Method of mechanical manufacture – Assembling or joining

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29576B, 29578, 29591, 357 4, 357 15, 148 15, 148DIG139, 148DIG140, 148DIG42, 427 84, H01L 2948

Patent

active

046385517

ABSTRACT:
An improved Schottky barrier device and method of manufacture is disclosed. The device has a semiconductor layer of first conductivity type; an insulating layer covering one face of the semiconductor layer, and has an opening therein. A conductor layer covers the semiconductor layer where the semiconductor layer is exposed by the opening and there forms a recitifying junction with the semiconductor layer. A first region of opposite conductivity type is at the one face of semiconductor layer and extends from where the conductor layer meets the insulating layer and below the conductor layer. A second region of opposite conductivity type is at the one face of semiconductor layer and begins where the conductor layer meets the insulating layer and extending below the insulating layer.

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patent: 3891479 (1975-06-01), Zwernemann
patent: 4206540 (1980-06-01), Gould
patent: 4223327 (1980-09-01), Nara et al.
patent: 4310362 (1982-01-01), Roche et al.
patent: 4377030 (1983-03-01), Pettenpaul et al.
patent: 4505023 (1985-03-01), Tseng et al.

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