Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1998-12-08
2000-08-15
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257184, 257449, 257472, 257473, H01L 3100, H01L 3107, H01L 31109, H01L 310328, H01L 310336
Patent
active
061040746
ABSTRACT:
The invention concerns the fabrication and characterization of vertical geometry transparent Schottky barrier ultraviolet detectors based on n.sup.-
.sup.+ -GaN and AlGaN structures grown over sapphire substrates. Mesa geometry devices of different active areas were fabricated and characterized for spectral responsitivity, speed and noise characteristics. The invention also concerns the fabrication and characterization of an 8.times.8 Schottky barrier photodiode array on GaN with a pixel size of 200 .mu.m by 200 .mu.m.
REFERENCES:
patent: 5192987 (1993-03-01), Khan et al.
patent: 5278435 (1994-01-01), Van Hove et al.
patent: 5296395 (1994-03-01), Khan et al.
patent: 5625202 (1997-04-01), Chai
patent: 5923049 (1999-07-01), Bohm et al.
Chen, Q. et al., "Visible-blind ultraviolet photodetectors based on GaN p-n junctions", Electronics Letters, 31(20):1781-1782 (Sep. 28, 1995).
Chernyak, L. et al., "Electron beam induced current measurements of minority carrier diffusion length in gallium nitride", Applied Physics Letters, 69(17):2531-2533 (Oct. 21, 1996).
Guo, J.D., "Study of Schottky barriers on n-type GaN grown by low-pressure metalorganic chemical vapor deposition", Applied Physics Letters, 67(18):2657-2659 (Oct. 30, 1995).
Khan, M.A. et al., "High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers", Applied Physics Letters, 60(23):2917-2919 (Jun. 8, 1992).
Khan, M.A. et al., "Photoluminescence characteristics of AIGaN-GaN-AIGaN quantum wells", Applied Physics Letters, 56(13):1257-1259 (Mar. 26, 1990).
Khan, M.A. et al., "Schottky barrier photodetector based on Mg-doped p-type GaN films", Applied Physics Letters, 63(18):2455-2456 (Nov. 1, 1993).
Lim, B.W. et al., "High responsitivity intrinsic photoconductors based on Ai.sub.x Ga.sub.1-x N", Applied Physics Letters, 68(26):3761-3762 (Jun. 24, 1996).
Mohammad, S.N. et al., "Reactive Molecular-Beam Epitaxy for Wurtzite GaN", MRS Bulletin, 22(2):22-28 (Feb. 1997).
Morkoc, H. et al., "Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies", Journal of Applied Physics, 76(3):1363-1398 (Aug. 1, 1994).
Nakamura, S. et al., "High-brightness InGaN/AIGaN double-heterostructure blue-green-light-emitting diodes", Journal of Applied Physics, 76(12):8189-8191 (Dec. 15, 1994).
Nakamura, S. et al., "InGaN-Based Multi-Quantum-Well-Structure Laser Diodes", Japanese Journal of Applied Physics, 35(1B):L74-L76 (Jan. 15, 1996).
Qian, W. et al., "Microstructural characterization of .alpha.-GaN films grown on sapphire by organometallic vapor phase epitaxy", Applied Physics Letters, 66(10):1252-1254 (Mar. 6, 1995).
Schmitz, A.C. et al., "Schottky barrier properties of various metals on n-type GaN", Semiconductor Science and Technology, 11(10):1464-1467 (Oct. 1996).
Stern, F. et al., "Electron energy levels in GaAs-Ga.sub.1-x A1.sub.x As heterojunctions", Physical Review B, 30(2):840-848 (Jul. 15, 1984).
Walker, D. et al., "GaN ultraviolet phtoconductors grown on sapphire", A;;, Applied Physics Letters, 68(15):2100-2101 (Apr. 8, 1996).
APA Optics, Inc.
Ngo Ngan V.
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